Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Series
TK
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15mm
Country of Origin
China
Product details
MOSFET Transistors, Toshiba
€ 11.34
€ 2.836 Each (In a Pack of 4) (Exc. VAT)
Standard
4
€ 11.34
€ 2.836 Each (In a Pack of 4) (Exc. VAT)
Stock information temporarily unavailable.
Standard
4
Stock information temporarily unavailable.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 4 - 16 | € 2.836 | € 11.34 |
| 20 - 76 | € 2.37 | € 9.48 |
| 80 - 196 | € 2.072 | € 8.29 |
| 200 - 396 | € 1.966 | € 7.86 |
| 400+ | € 1.918 | € 7.67 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Series
TK
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15mm
Country of Origin
China
Product details


