N-Channel MOSFET, 400 mA, 30 V, 3-Pin SOT-323 Toshiba SSM3K09FU

RS Stock No.: 171-2396Brand: ToshibaManufacturers Part No.: SSM3K09FU
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

400 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-323

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.7 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.8V

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

150 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

2mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

1.25mm

Height

0.9mm

Country of Origin

Thailand

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P.O.A.

N-Channel MOSFET, 400 mA, 30 V, 3-Pin SOT-323 Toshiba SSM3K09FU

3000

Available in multiples of 3000
3000P.O.A.
6000P.O.A.
9000P.O.A.
12000P.O.A.
15000P.O.A.
18000P.O.A.
21000P.O.A.
24000P.O.A.
27000P.O.A.
30000P.O.A.
33000P.O.A.
36000P.O.A.
39000P.O.A.
42000P.O.A.
45000P.O.A.

P.O.A.

N-Channel MOSFET, 400 mA, 30 V, 3-Pin SOT-323 Toshiba SSM3K09FU
Stock information temporarily unavailable.

3000

Available in multiples of 3000
3000P.O.A.
6000P.O.A.
9000P.O.A.
12000P.O.A.
15000P.O.A.
18000P.O.A.
21000P.O.A.
24000P.O.A.
27000P.O.A.
30000P.O.A.
33000P.O.A.
36000P.O.A.
39000P.O.A.
42000P.O.A.
45000P.O.A.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

400 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-323

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.7 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.8V

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

150 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

2mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

1.25mm

Height

0.9mm

Country of Origin

Thailand

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more