N-Channel MOSFET, 6 A, 600 V, 3-Pin DPAK Taiwan Semi TSM6N60CP ROG

RS Stock No.: 171-3634Brand: Taiwan SemiconductorManufacturers Part No.: TSM6N60CP ROG
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

600 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.25 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

89 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

5.8mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.5mm

Typical Gate Charge @ Vgs

20.7 nC @ 10 V

Height

2.3mm

Forward Diode Voltage

1.5V

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P.O.A.

N-Channel MOSFET, 6 A, 600 V, 3-Pin DPAK Taiwan Semi TSM6N60CP ROG

P.O.A.

N-Channel MOSFET, 6 A, 600 V, 3-Pin DPAK Taiwan Semi TSM6N60CP ROG
Stock information temporarily unavailable.

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

600 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.25 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

89 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

5.8mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.5mm

Typical Gate Charge @ Vgs

20.7 nC @ 10 V

Height

2.3mm

Forward Diode Voltage

1.5V