N-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK Taiwan Semi TSM230N06CP ROG

RS Stock No.: 171-3617Brand: Taiwan SemiconductorManufacturers Part No.: TSM230N06CP ROG
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

28 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

53 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

5.8mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.5mm

Typical Gate Charge @ Vgs

28 nC @ 10 V

Height

2.3mm

Forward Diode Voltage

1V

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€ 0.215

Each (On a Reel of 2500) (Exc. Vat)

N-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK Taiwan Semi TSM230N06CP ROG

€ 0.215

Each (On a Reel of 2500) (Exc. Vat)

N-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK Taiwan Semi TSM230N06CP ROG
Stock information temporarily unavailable.

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

28 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

53 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

5.8mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.5mm

Typical Gate Charge @ Vgs

28 nC @ 10 V

Height

2.3mm

Forward Diode Voltage

1V