Technical Document
Specifications
Brand
Taiwan SemiconductorChannel Type
P
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3.1mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
10 nC @ 10 V
Width
1.7mm
Height
1.2mm
Minimum Operating Temperature
-55 °C
Product details
P-Channel Power MOSFET, Taiwan Semiconductor
MOSFET Transistors, Taiwan Semiconductor
€ 67.29
€ 0.269 Each (Supplied on a Reel) (Exc. VAT)
Production pack (Reel)
250
€ 67.29
€ 0.269 Each (Supplied on a Reel) (Exc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
250
Stock information temporarily unavailable.
Quantity | Unit price | Per Reel |
---|---|---|
250 - 475 | € 0.269 | € 6.73 |
500+ | € 0.261 | € 6.53 |
Technical Document
Specifications
Brand
Taiwan SemiconductorChannel Type
P
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3.1mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
10 nC @ 10 V
Width
1.7mm
Height
1.2mm
Minimum Operating Temperature
-55 °C
Product details