Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
138 A
Maximum Drain Source Voltage
650 V
Series
MDmesh
Package Type
Max247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
625 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
5.3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.9mm
Typical Gate Charge @ Vgs
414 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
20.3mm
Forward Diode Voltage
1.5V
Product details
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
$ 41.91
$ 41.91 Each (Exc. VAT)
Standard
1
$ 41.91
$ 41.91 Each (Exc. VAT)
Standard
1
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Please check again later.
Quantity | Unit price |
---|---|
1 - 1 | $ 41.91 |
2 - 4 | $ 40.81 |
5 - 9 | $ 39.76 |
10+ | $ 38.76 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
138 A
Maximum Drain Source Voltage
650 V
Series
MDmesh
Package Type
Max247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
625 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
5.3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.9mm
Typical Gate Charge @ Vgs
414 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
20.3mm
Forward Diode Voltage
1.5V
Product details