Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
39 A
Maximum Drain Source Voltage
600 V
Series
MDmesh
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
255 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Width
5.15mm
Length
15.75mm
Typical Gate Charge @ Vgs
124 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
20.15mm
Product details
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 131.64
€ 4.388 Each (In a Tube of 30) (Exc. VAT)
30
€ 131.64
€ 4.388 Each (In a Tube of 30) (Exc. VAT)
30
Stock information temporarily unavailable.
Please check again later.
Quantity | Unit price | Per Tube |
---|---|---|
30 - 30 | € 4.388 | € 131.64 |
60+ | € 4.169 | € 125.06 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
39 A
Maximum Drain Source Voltage
600 V
Series
MDmesh
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
255 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Width
5.15mm
Length
15.75mm
Typical Gate Charge @ Vgs
124 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
20.15mm
Product details