Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
600 V
Series
MDmesh
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
285 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Width
4.6mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
10.4mm
Typical Gate Charge @ Vgs
35 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
15.75mm
Product details
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
€ 48.58
€ 0.972 Each (In a Tube of 50) (Exc. VAT)
50
€ 48.58
€ 0.972 Each (In a Tube of 50) (Exc. VAT)
Stock information temporarily unavailable.
50
| Quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 50 | € 0.972 | € 48.58 |
| 100+ | € 0.924 | € 46.18 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
600 V
Series
MDmesh
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
285 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Width
4.6mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
10.4mm
Typical Gate Charge @ Vgs
35 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
15.75mm
Product details


