Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
100A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-220
Series
STripFET F7
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
5.6mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
125W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
12.6nC
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Width
4.6 mm
Height
9.15mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
€ 8.96
€ 0.896 Each (In a Pack of 10) (Exc. VAT)
Standard
10
€ 8.96
€ 0.896 Each (In a Pack of 10) (Exc. VAT)
Stock information temporarily unavailable.
Standard
10
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 40 | € 0.896 | € 8.96 |
| 50 - 90 | € 0.872 | € 8.72 |
| 100 - 240 | € 0.85 | € 8.50 |
| 250 - 490 | € 0.828 | € 8.28 |
| 500+ | € 0.807 | € 8.07 |
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
100A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-220
Series
STripFET F7
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
5.6mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
125W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
12.6nC
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Width
4.6 mm
Height
9.15mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.


