Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
90A
Maximum Drain Source Voltage Vds
60V
Package Type
PowerFLAT
Series
STripFET F7
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
5.4mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
94W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
25nC
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Width
6.35 mm
Height
0.95mm
Length
5.4mm
Standards/Approvals
No
Automotive Standard
No
Country of Origin
China
Product details
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
€ 9.92
€ 0.992 Each (In a Pack of 10) (Exc. VAT)
Standard
10
€ 9.92
€ 0.992 Each (In a Pack of 10) (Exc. VAT)
Stock information temporarily unavailable.
Standard
10
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 10 | € 0.992 | € 9.92 |
| 20+ | € 0.943 | € 9.43 |
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
90A
Maximum Drain Source Voltage Vds
60V
Package Type
PowerFLAT
Series
STripFET F7
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
5.4mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
94W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
25nC
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Width
6.35 mm
Height
0.95mm
Length
5.4mm
Standards/Approvals
No
Automotive Standard
No
Country of Origin
China
Product details
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.


