STMicroelectronics STH N channel-Channel Power MOSFET, 397 A, 60 V Enhancement, 2-Pin H2PAK-2 STH345N6F7-2

RS Stock No.: 719-651Brand: STMicroelectronicsManufacturers Part No.: STH345N6F7-2
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Technical Document

Specifications

Brand

STMicroelectronics

Product Type

Power MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

397A

Maximum Drain Source Voltage Vds

60V

Package Type

H2PAK-2

Series

STH

Mount Type

Surface Mount

Pin Count

2

Maximum Drain Source Resistance Rds

1.2mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

230nC

Maximum Power Dissipation Pd

341W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Length

9.3mm

Height

4.7mm

Country of Origin

China

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Stock information temporarily unavailable.

€ 2,600.13

€ 2.60 Each (On a Reel of 1000) (Exc. VAT)

STMicroelectronics STH N channel-Channel Power MOSFET, 397 A, 60 V Enhancement, 2-Pin H2PAK-2 STH345N6F7-2

1000

Available in multiples of 1000
1000€ 2,600.13
2000€ 5,200.26
3000€ 7,800.39
4000€ 10,400.52
5000€ 13,000.65
6000€ 15,600.78
7000€ 18,200.91
8000€ 20,801.04
9000€ 23,401.17
10000€ 26,001.30
11000€ 28,601.43
12000€ 31,201.56
13000€ 33,801.69
14000€ 36,401.82
15000€ 39,001.95

€ 2,600.13

€ 2.60 Each (On a Reel of 1000) (Exc. VAT)

STMicroelectronics STH N channel-Channel Power MOSFET, 397 A, 60 V Enhancement, 2-Pin H2PAK-2 STH345N6F7-2

Stock information temporarily unavailable.

1000

Available in multiples of 1000
1000€ 2,600.13
2000€ 5,200.26
3000€ 7,800.39
4000€ 10,400.52
5000€ 13,000.65
6000€ 15,600.78
7000€ 18,200.91
8000€ 20,801.04
9000€ 23,401.17
10000€ 26,001.30
11000€ 28,601.43
12000€ 31,201.56
13000€ 33,801.69
14000€ 36,401.82
15000€ 39,001.95

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Product Type

Power MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

397A

Maximum Drain Source Voltage Vds

60V

Package Type

H2PAK-2

Series

STH

Mount Type

Surface Mount

Pin Count

2

Maximum Drain Source Resistance Rds

1.2mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

230nC

Maximum Power Dissipation Pd

341W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Length

9.3mm

Height

4.7mm

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more