STMicroelectronics, Type N-Channel IGBT 650 V, 3-Pin TO-247, Through Hole
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
469W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Height
20.15mm
Standards/Approvals
Lead (Pb) Free package, ECOPACK
Series
H
Automotive Standard
No
Country of Origin
China
Product details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Stock information temporarily unavailable.
€ 135.76
€ 4.525 Each (In a Tube of 30) (Exc. VAT)
30
€ 135.76
€ 4.525 Each (In a Tube of 30) (Exc. VAT)
Stock information temporarily unavailable.
30
| Quantity | Unit price | Per Tube |
|---|---|---|
| 30 - 30 | € 4.525 | € 135.76 |
| 60 - 120 | € 4.408 | € 132.24 |
| 150+ | € 4.299 | € 128.96 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
469W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Height
20.15mm
Standards/Approvals
Lead (Pb) Free package, ECOPACK
Series
H
Automotive Standard
No
Country of Origin
China
Product details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products