STMicroelectronics, Type N-Channel Trench Gate Field Stop IGBT, 10 A 600 V, 3-Pin TO-252, Surface
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
Trench Gate Field Stop IGBT
Maximum Continuous Collector Current Ic
10A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
88W
Package Type
TO-252
Mount Type
Surface
Channel Type
Type N
Pin Count
3
Minimum Operating Temperature
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
1.95V
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Operating Temperature
175°C
Height
2.4mm
Standards/Approvals
RoHS
Series
H
Length
6.6mm
Energy Rating
221mJ
Automotive Standard
No
Country of Origin
China
Product details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Stock information temporarily unavailable.
€ 30.84
€ 0.617 Each (Supplied on a Reel) (Exc. VAT)
Production pack (Reel)
50
€ 30.84
€ 0.617 Each (Supplied on a Reel) (Exc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
50
| Quantity | Unit price | Per Reel |
|---|---|---|
| 50 - 90 | € 0.617 | € 6.17 |
| 100 - 240 | € 0.554 | € 5.54 |
| 250 - 490 | € 0.50 | € 5.00 |
| 500+ | € 0.476 | € 4.76 |
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Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
Trench Gate Field Stop IGBT
Maximum Continuous Collector Current Ic
10A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
88W
Package Type
TO-252
Mount Type
Surface
Channel Type
Type N
Pin Count
3
Minimum Operating Temperature
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
1.95V
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Operating Temperature
175°C
Height
2.4mm
Standards/Approvals
RoHS
Series
H
Length
6.6mm
Energy Rating
221mJ
Automotive Standard
No
Country of Origin
China
Product details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products