IGBT, STGB10NC60HDT4, N-Canal, 10 A, 600 V, D2PAK (TO-263), 3-Pines, 1MHZ Simple
Documentos Técnicos
Especificaciones
Brand
STMicroelectronicsCorriente Máxima Continua del Colector
10 A
Tensión Máxima Colector-Emisor
600 V
Tensión Máxima Puerta-Emisor
±20V
Disipación de Potencia Máxima
65 W
Tipo de Encapsulado
D2PAK (TO-263)
Tipo de montaje
Montaje superficial
Tipo de Canal
N
Conteo de Pines
3
Velocidad de Conmutación
1MHz
Configuración de transistor
Single
Dimensiones
10.4 x 9.35 x 4.6mm
Temperatura de Funcionamiento Mínima
-55 °C
Temperatura Máxima de Funcionamiento
+150 ºC
Datos del producto
Discretos IGBT, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 9,20
€ 1,84 Each (In a Pack of 5) (Sin IVA)
Estándar
5
€ 9,20
€ 1,84 Each (In a Pack of 5) (Sin IVA)
Información de stock no disponible temporalmente.
Estándar
5
Información de stock no disponible temporalmente.
| Cantidad | Precio Unitario sin IVA | Per Pack |
|---|---|---|
| 5 - 20 | € 1,84 | € 9,20 |
| 25 - 45 | € 1,748 | € 8,74 |
| 50 - 120 | € 1,576 | € 7,88 |
| 125 - 245 | € 1,413 | € 7,07 |
| 250+ | € 1,345 | € 6,72 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
STMicroelectronicsCorriente Máxima Continua del Colector
10 A
Tensión Máxima Colector-Emisor
600 V
Tensión Máxima Puerta-Emisor
±20V
Disipación de Potencia Máxima
65 W
Tipo de Encapsulado
D2PAK (TO-263)
Tipo de montaje
Montaje superficial
Tipo de Canal
N
Conteo de Pines
3
Velocidad de Conmutación
1MHz
Configuración de transistor
Single
Dimensiones
10.4 x 9.35 x 4.6mm
Temperatura de Funcionamiento Mínima
-55 °C
Temperatura Máxima de Funcionamiento
+150 ºC
Datos del producto
Discretos IGBT, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products