Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
28A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-220
Series
MDmesh DM2
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
110mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
54nC
Forward Voltage Vf
1.6V
Maximum Power Dissipation Pd
40W
Maximum Gate Source Voltage Vgs
25 V
Maximum Operating Temperature
150°C
Height
16.4mm
Length
10.4mm
Standards/Approvals
No
Width
4.6 mm
Automotive Standard
No
Product details
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
High dV/dt capability for improved system reliability
AEC-Q101 qualified
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
€ 5.96
€ 2.979 Each (In a Pack of 2) (Exc. VAT)
Standard
2
€ 5.96
€ 2.979 Each (In a Pack of 2) (Exc. VAT)
Stock information temporarily unavailable.
Standard
2
| Quantity | Unit price | Per Pack |
|---|---|---|
| 2 - 8 | € 2.979 | € 5.96 |
| 10 - 98 | € 2.905 | € 5.81 |
| 100 - 498 | € 2.824 | € 5.65 |
| 500+ | € 2.761 | € 5.52 |
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
28A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-220
Series
MDmesh DM2
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
110mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
54nC
Forward Voltage Vf
1.6V
Maximum Power Dissipation Pd
40W
Maximum Gate Source Voltage Vgs
25 V
Maximum Operating Temperature
150°C
Height
16.4mm
Length
10.4mm
Standards/Approvals
No
Width
4.6 mm
Automotive Standard
No
Product details
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
High dV/dt capability for improved system reliability
AEC-Q101 qualified


