Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
800 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
4.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.6mm
Typical Gate Charge @ Vgs
9.5 nC @ 10 V
Width
6.2mm
Transistor Material
Si
Series
MDmesh K5, SuperMESH5
Minimum Operating Temperature
-55 °C
Height
2.4mm
Product details
N-channel MDmesh™ K5 series, SuperMESH5™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
Price on asking
Each (In a Pack of 5) (Exc. VAT)
Standard
5
Price on asking
Each (In a Pack of 5) (Exc. VAT)
Stock information temporarily unavailable.
Standard
5
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
800 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
4.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.6mm
Typical Gate Charge @ Vgs
9.5 nC @ 10 V
Width
6.2mm
Transistor Material
Si
Series
MDmesh K5, SuperMESH5
Minimum Operating Temperature
-55 °C
Height
2.4mm
Product details


