Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-252
Series
STripFET H7
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
8mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
120W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
61nC
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Width
6.2 mm
Height
2.4mm
Length
6.6mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
€ 8.68
€ 1.736 Each (Supplied on a Reel) (Exc. VAT)
Production pack (Reel)
5
€ 8.68
€ 1.736 Each (Supplied on a Reel) (Exc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
5
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-252
Series
STripFET H7
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
8mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
120W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
61nC
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Width
6.2 mm
Height
2.4mm
Length
6.6mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


