Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
13 A
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Length
10.4mm
Typical Gate Charge @ Vgs
16.8 nC @ 10 V
Width
9.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
4.37mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Country of Origin
China
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€ 2.428
Each (In a Pack of 5) (Exc. Vat)
5
€ 2.428
Each (In a Pack of 5) (Exc. Vat)
5
Buy in bulk
Quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | € 2.428 | € 12.14 |
25 - 45 | € 2.307 | € 11.54 |
50 - 120 | € 2.076 | € 10.38 |
125 - 245 | € 1.868 | € 9.34 |
250+ | € 1.777 | € 8.88 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
13 A
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Length
10.4mm
Typical Gate Charge @ Vgs
16.8 nC @ 10 V
Width
9.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
4.37mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Country of Origin
China