N-Channel MOSFET Transistor, 13 A, 3-Pin D2PAK STMicroelectronics STB18N60M6

RS Stock No.: 192-4649Brand: STMicroelectronicsManufacturers Part No.: STB18N60M6
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

13 A

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.75V

Minimum Gate Threshold Voltage

3.25V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Width

9.35mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.4mm

Typical Gate Charge @ Vgs

16.8 nC @ 10 V

Height

4.37mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.6V

Country of Origin

China

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€ 1.276

Each (On a Reel of 1000) (Exc. Vat)

N-Channel MOSFET Transistor, 13 A, 3-Pin D2PAK STMicroelectronics STB18N60M6

€ 1.276

Each (On a Reel of 1000) (Exc. Vat)

N-Channel MOSFET Transistor, 13 A, 3-Pin D2PAK STMicroelectronics STB18N60M6
Stock information temporarily unavailable.

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

13 A

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.75V

Minimum Gate Threshold Voltage

3.25V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Width

9.35mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.4mm

Typical Gate Charge @ Vgs

16.8 nC @ 10 V

Height

4.37mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.6V

Country of Origin

China