Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
650 V
Series
SCT
Package Type
H²PAK-7
Mounting Type
Through Hole
Pin Count
7
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC
Country of Origin
China
Price on asking
STMicroelectronics SCT SiC N-Channel MOSFET, 55 A, 650 V, 7-Pin H2PAK-7 SCT018H65G3AG
Select packaging type
Production pack (Reel)
1
Price on asking
STMicroelectronics SCT SiC N-Channel MOSFET, 55 A, 650 V, 7-Pin H2PAK-7 SCT018H65G3AG
Stock information temporarily unavailable.
Select packaging type
Production pack (Reel)
1
Stock information temporarily unavailable.
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
650 V
Series
SCT
Package Type
H²PAK-7
Mounting Type
Through Hole
Pin Count
7
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC
Country of Origin
China


