N-Channel MOSFET, 1.5 A, 18 V, 3-Pin SOT-89 STMicroelectronics PD84001
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
1.5 A
Maximum Drain Source Voltage
18 V
Package Type
SOT-89
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Maximum Power Dissipation
6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-0.5 V, +15 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
4.6mm
Width
2.6mm
Height
1.6mm
Product details
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.
MOSFET Transistors, STMicroelectronics
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Price on asking
Each (Supplied on a Reel) (Exc. VAT)
Production pack (Reel)
5
Price on asking
Each (Supplied on a Reel) (Exc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
5
Stock information temporarily unavailable.
Ideate. Create. Collaborate
JOIN FOR FREE
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Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
1.5 A
Maximum Drain Source Voltage
18 V
Package Type
SOT-89
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Maximum Power Dissipation
6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-0.5 V, +15 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
4.6mm
Width
2.6mm
Height
1.6mm
Product details
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products