Semikron Danfoss SKM400GB176D, Type N-Channel IGBT Module, 430 A 1700 V, 7-Pin SEMITRANS, Panel
Technical Document
Specifications
Brand
Semikron DanfossMaximum Continuous Collector Current Ic
430A
Product Type
IGBT Module
Maximum Collector Emitter Voltage Vceo
1700V
Number of Transistors
2
Package Type
SEMITRANS
Mount Type
Panel
Channel Type
Type N
Pin Count
7
Maximum Gate Emitter Voltage VGEO
20 V
Minimum Operating Temperature
150°C
Maximum Collector Emitter Saturation Voltage VceSAT
2.4V
Maximum Operating Temperature
-40°C
Height
30mm
Length
106.4mm
Standards/Approvals
No
Series
SKM400GB176D
Automotive Standard
No
Product details
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
Compact SEMITOP® package
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Stock information temporarily unavailable.
€ 493.76
€ 493.76 Each (Exc. VAT)
1
€ 493.76
€ 493.76 Each (Exc. VAT)
Stock information temporarily unavailable.
1
| Quantity | Unit price |
|---|---|
| 1 - 1 | € 493.76 |
| 2 - 4 | € 474.01 |
| 5 - 9 | € 455.25 |
| 10 - 19 | € 436.97 |
| 20+ | € 419.20 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
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Technical Document
Specifications
Brand
Semikron DanfossMaximum Continuous Collector Current Ic
430A
Product Type
IGBT Module
Maximum Collector Emitter Voltage Vceo
1700V
Number of Transistors
2
Package Type
SEMITRANS
Mount Type
Panel
Channel Type
Type N
Pin Count
7
Maximum Gate Emitter Voltage VGEO
20 V
Minimum Operating Temperature
150°C
Maximum Collector Emitter Saturation Voltage VceSAT
2.4V
Maximum Operating Temperature
-40°C
Height
30mm
Length
106.4mm
Standards/Approvals
No
Series
SKM400GB176D
Automotive Standard
No
Product details
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
Compact SEMITOP® package
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products