Módulo IGBT, SKM400GAL12E4 , N-Canal, 618 A, 1200 V, SEMITRANS3, 5-Pines Simple
Documentos Técnicos
Especificaciones
Brand
Semikron DanfossCorriente Máxima Continua del Colector
618 A
Tensión Máxima Colector-Emisor
1200 V
Tensión Máxima Puerta-Emisor
±20V
Configuración
Single
Tipo de Encapsulado
SEMITRANS3
Tipo de montaje
Panel Mount
Tipo de Canal
N
Conteo de Pines
5
Configuración de transistor
Single
Dimensiones
106.4 x 61.4 x 30.5mm
Mínima Temperatura de Funcionamiento
–40 °C
Temperatura máxima de funcionamiento
+175 °C
Datos del producto
Módulos IGBT simples
Semikron ofrece módulos IGBT (transistor bipolar de puerta aislada) en encapsulados SEMITRANS, SEMiX y SEMITOP en varias topologías, valores de corriente y tensiones nominales.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 253,61
€ 253,61 Each (Sin IVA)
1
€ 253,61
€ 253,61 Each (Sin IVA)
1
Información de stock no disponible temporalmente.
Vuelva a verificar más tarde.
| Cantidad | Precio Unitario sin IVA |
|---|---|
| 1 - 9 | € 253,61 |
| 10 - 19 | € 241,18 |
| 20 - 49 | € 229,00 |
| 50 - 249 | € 217,60 |
| 250+ | € 206,95 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
Semikron DanfossCorriente Máxima Continua del Colector
618 A
Tensión Máxima Colector-Emisor
1200 V
Tensión Máxima Puerta-Emisor
±20V
Configuración
Single
Tipo de Encapsulado
SEMITRANS3
Tipo de montaje
Panel Mount
Tipo de Canal
N
Conteo de Pines
5
Configuración de transistor
Single
Dimensiones
106.4 x 61.4 x 30.5mm
Mínima Temperatura de Funcionamiento
–40 °C
Temperatura máxima de funcionamiento
+175 °C
Datos del producto
Módulos IGBT simples
Semikron ofrece módulos IGBT (transistor bipolar de puerta aislada) en encapsulados SEMITRANS, SEMiX y SEMITOP en varias topologías, valores de corriente y tensiones nominales.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products