Technical Document
Specifications
Brand
ROHMChannel Type
N
Maximum Continuous Drain Current
3.7 A
Maximum Drain Source Voltage
1700 V
Package Type
TO-3PFM
Series
SCT2H12NZ
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
1.6V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-6 V, +22 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Width
5mm
Length
16mm
Typical Gate Charge @ Vgs
14 nC @ 18 V
Forward Diode Voltage
4.3V
Height
21mm
Product details
N-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
€ 67.51
€ 6.751 Each (Supplied in a Tube) (Exc. VAT)
Production pack (Tube)
10
€ 67.51
€ 6.751 Each (Supplied in a Tube) (Exc. VAT)
Stock information temporarily unavailable.
Production pack (Tube)
10
Stock information temporarily unavailable.
Quantity | Unit price | Per Tube |
---|---|---|
10 - 18 | € 6.751 | € 13.50 |
20 - 98 | € 6.717 | € 13.43 |
100 - 198 | € 6.642 | € 13.28 |
200+ | € 6.521 | € 13.04 |
Technical Document
Specifications
Brand
ROHMChannel Type
N
Maximum Continuous Drain Current
3.7 A
Maximum Drain Source Voltage
1700 V
Package Type
TO-3PFM
Series
SCT2H12NZ
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
1.6V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-6 V, +22 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Width
5mm
Length
16mm
Typical Gate Charge @ Vgs
14 nC @ 18 V
Forward Diode Voltage
4.3V
Height
21mm
Product details