ROHM RGW80TK65EC11 IGBT, 39 A 650 V, 3-Pin TO-3PFM, Through Hole
Technical Document
Specifications
Brand
ROHMMaximum Continuous Collector Current
39 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±30V
Number of Transistors
1
Maximum Power Dissipation
81 W
Package Type
TO-3PFM
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Dimensions
16 x 5 x 21mm
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-40 °C
Gate Capacitance
3320pF
Country of Origin
Thailand
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P.O.A.
2
P.O.A.
2
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Technical Document
Specifications
Brand
ROHMMaximum Continuous Collector Current
39 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±30V
Number of Transistors
1
Maximum Power Dissipation
81 W
Package Type
TO-3PFM
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Dimensions
16 x 5 x 21mm
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-40 °C
Gate Capacitance
3320pF
Country of Origin
Thailand
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products