Technical Document
Specifications
Brand
ROHMProduct Type
SiC Power Module
Channel Type
Type N
Series
BSM
Pin Count
4
Channel Mode
Enhancement
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
150°C
Width
45.6 mm
Length
122mm
Height
17mm
Number of Elements per Chip
2
Country of Origin
Japan
Product details
SiC Power Modules, ROHM
The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.
Half-Bridge configuration
Low Surge Current
Low Power Switching Losses
High-Speed Switching
Low Operating Temperature
MOSFET Transistors, ROHM Semiconductor
Stock information temporarily unavailable.
€ 623.03
€ 623.03 Each (Exc. VAT)
1
€ 623.03
€ 623.03 Each (Exc. VAT)
Stock information temporarily unavailable.
1
| Quantity | Unit price |
|---|---|
| 1 - 1 | € 623.03 |
| 2 - 4 | € 606.63 |
| 5 - 9 | € 591.08 |
| 10+ | € 576.30 |
Technical Document
Specifications
Brand
ROHMProduct Type
SiC Power Module
Channel Type
Type N
Series
BSM
Pin Count
4
Channel Mode
Enhancement
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
150°C
Width
45.6 mm
Length
122mm
Height
17mm
Number of Elements per Chip
2
Country of Origin
Japan
Product details
SiC Power Modules, ROHM
The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.
Half-Bridge configuration
Low Surge Current
Low Power Switching Losses
High-Speed Switching
Low Operating Temperature


