Technical Document
Specifications
Brand
ROHMTransistor Type
NPN
Maximum DC Collector Current
50 mA
Maximum Collector Emitter Voltage
11 V
Package Type
SOT-723
Mounting Type
Surface Mount
Maximum Power Dissipation
150 mW
Transistor Configuration
Common Emitter
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
3 V
Maximum Operating Frequency
500 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
1.3 x 0.9 x 0.45mm
Country of Origin
Japan
Product details
RF Bipolar Transistors, ROHM
Wide-band high-frequency bipolar junction transisstors from ROHM for applications such as RF amplifiers and HF oscillators.
Bipolar Transistors, ROHM Semiconductor
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€ 0.136
Each (In a Pack of 50) (Exc. Vat)
50
€ 0.136
Each (In a Pack of 50) (Exc. Vat)
50
Buy in bulk
Quantity | Unit price | Per Pack |
---|---|---|
50 - 200 | € 0.136 | € 6.78 |
250 - 450 | € 0.122 | € 6.08 |
500 - 2450 | € 0.118 | € 5.91 |
2500 - 4950 | € 0.115 | € 5.73 |
5000+ | € 0.111 | € 5.56 |
Technical Document
Specifications
Brand
ROHMTransistor Type
NPN
Maximum DC Collector Current
50 mA
Maximum Collector Emitter Voltage
11 V
Package Type
SOT-723
Mounting Type
Surface Mount
Maximum Power Dissipation
150 mW
Transistor Configuration
Common Emitter
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
3 V
Maximum Operating Frequency
500 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
1.3 x 0.9 x 0.45mm
Country of Origin
Japan
Product details
RF Bipolar Transistors, ROHM
Wide-band high-frequency bipolar junction transisstors from ROHM for applications such as RF amplifiers and HF oscillators.