onsemi N-Channel MOSFET, 252 A, 40 V, 4-Pin LFPAK, SOT-669 NVMYS1D3N04CTWG
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
252 A
Maximum Drain Source Voltage
40 V
Package Type
LFPAK, SOT-669
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
1.15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
134 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
4.25mm
Length
5mm
Typical Gate Charge @ Vgs
75 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.2mm
Automotive Standard
AEC-Q101
Country of Origin
Philippines
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€ 7.09
€ 1.772 Each (In a Pack of 4) (Exc. VAT)
Standard
4
€ 7.09
€ 1.772 Each (In a Pack of 4) (Exc. VAT)
Standard
4
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| Quantity | Unit price | Per Pack |
|---|---|---|
| 4 - 36 | € 1.772 | € 7.09 |
| 40 - 396 | € 1.526 | € 6.10 |
| 400 - 1996 | € 1.324 | € 5.29 |
| 2000+ | € 1.165 | € 4.66 |
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Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
252 A
Maximum Drain Source Voltage
40 V
Package Type
LFPAK, SOT-669
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
1.15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
134 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
4.25mm
Length
5mm
Typical Gate Charge @ Vgs
75 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.2mm
Automotive Standard
AEC-Q101
Country of Origin
Philippines
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products