onsemi N-Channel MOSFET, 554.5 A, 40 V, 8-Pin DFNW8 NTMTS0D6N04CLTXG
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
554.5 A
Maximum Drain Source Voltage
40 V
Package Type
DFNW8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
660 μΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
245.4 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
8mm
Length
8.1mm
Typical Gate Charge @ Vgs
126 nC @ 4.5 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.15mm
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€ 7.19
€ 3.595 Each (In a Pack of 2) (Exc. VAT)
Standard
2
€ 7.19
€ 3.595 Each (In a Pack of 2) (Exc. VAT)
Standard
2
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Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 2 - 18 | € 3.595 | € 7.19 |
| 20 - 198 | € 3.098 | € 6.20 |
| 200 - 998 | € 2.688 | € 5.38 |
| 1000 - 1998 | € 2.364 | € 4.73 |
| 2000+ | € 2.15 | € 4.30 |
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Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
554.5 A
Maximum Drain Source Voltage
40 V
Package Type
DFNW8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
660 μΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
245.4 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
8mm
Length
8.1mm
Typical Gate Charge @ Vgs
126 nC @ 4.5 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.15mm
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products