onsemi NTH SiC N-Channel MOSFET Transistor, 29 A, 1200 V, 4-Pin TO-247-4 NTH4L080N120SC1
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
29 A
Maximum Drain Source Voltage
1200 V
Series
NTH
Package Type
TO-247-4
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
0.11 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.3V
Number of Elements per Chip
1
Transistor Material
SiC
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€ 107.67
€ 5.384 Each (Supplied in a Tube) (Exc. VAT)
Production pack (Tube)
20
€ 107.67
€ 5.384 Each (Supplied in a Tube) (Exc. VAT)
Stock information temporarily unavailable.
Production pack (Tube)
20
Stock information temporarily unavailable.
| Quantity | Unit price | Per Tube |
|---|---|---|
| 20 - 198 | € 5.384 | € 10.77 |
| 200+ | € 4.67 | € 9.34 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
29 A
Maximum Drain Source Voltage
1200 V
Series
NTH
Package Type
TO-247-4
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
0.11 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.3V
Number of Elements per Chip
1
Transistor Material
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products