Technical Document
Specifications
Brand
onsemiProduct Type
JFET
Sub Type
JFET
Channel Type
Type N
Maximum Drain Source Voltage Vds
25V
Configuration
Single
Mount Type
Surface
Package Type
SOT-23
Maximum Power Dissipation Pd
225mW
Maximum Gate Source Voltage Vgs
25 V
Pin Count
3
Drain Source Current Ids
24 to 60 mA
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Width
1.4 mm
Length
3.04mm
Height
1.01mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Stock information temporarily unavailable.
€ 8.78
€ 0.176 Each (Supplied on a Reel) (Exc. VAT)
Production pack (Reel)
50
€ 8.78
€ 0.176 Each (Supplied on a Reel) (Exc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
50
| Quantity | Unit price | Per Reel |
|---|---|---|
| 50 - 95 | € 0.176 | € 0.88 |
| 100 - 495 | € 0.153 | € 0.76 |
| 500 - 995 | € 0.132 | € 0.66 |
| 1000+ | € 0.121 | € 0.60 |
Technical Document
Specifications
Brand
onsemiProduct Type
JFET
Sub Type
JFET
Channel Type
Type N
Maximum Drain Source Voltage Vds
25V
Configuration
Single
Mount Type
Surface
Package Type
SOT-23
Maximum Power Dissipation Pd
225mW
Maximum Gate Source Voltage Vgs
25 V
Pin Count
3
Drain Source Current Ids
24 to 60 mA
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Width
1.4 mm
Length
3.04mm
Height
1.01mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.


