Technical Document
Specifications
Brand
onsemiProduct Type
JFET
Sub Type
JFET
Channel Type
Type N
Maximum Drain Source Voltage Vds
30V
Configuration
Single
Mount Type
Surface
Package Type
SOT-23
Maximum Power Dissipation Pd
225mW
Maximum Gate Source Voltage Vgs
-40 V
Pin Count
3
Minimum Operating Temperature
-55°C
Drain Source Current Ids
0.3 to 1.5 mA
Maximum Operating Temperature
150°C
Width
1.3 mm
Height
0.93mm
Length
2.92mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Stock information temporarily unavailable.
€ 20.20
€ 0.202 Each (Supplied on a Reel) (Exc. VAT)
Production pack (Reel)
100
€ 20.20
€ 0.202 Each (Supplied on a Reel) (Exc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
100
| Quantity | Unit price | Per Reel |
|---|---|---|
| 100 - 225 | € 0.202 | € 5.05 |
| 250 - 475 | € 0.175 | € 4.39 |
| 500 - 975 | € 0.153 | € 3.84 |
| 1000+ | € 0.14 | € 3.49 |
Technical Document
Specifications
Brand
onsemiProduct Type
JFET
Sub Type
JFET
Channel Type
Type N
Maximum Drain Source Voltage Vds
30V
Configuration
Single
Mount Type
Surface
Package Type
SOT-23
Maximum Power Dissipation Pd
225mW
Maximum Gate Source Voltage Vgs
-40 V
Pin Count
3
Minimum Operating Temperature
-55°C
Drain Source Current Ids
0.3 to 1.5 mA
Maximum Operating Temperature
150°C
Width
1.3 mm
Height
0.93mm
Length
2.92mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.


