IGBT, ISL9V3040D3ST, N-Canal, 21 A, 300 V, DPAK (TO-252), 3-Pines, 1MHZ Simple
Documentos Técnicos
Especificaciones
Brand
onsemiCorriente Máxima Continua del Colector
21 A
Tensión Máxima Colector-Emisor
300 V
Tensión Máxima Puerta-Emisor
±10V
Disipación de Potencia Máxima
150000 mW
Tipo de Encapsulado
DPAK (TO-252)
Tipo de montaje
Surface Mount
Tipo de Canal
N
Conteo de Pines
3
Velocidad de Conmutación
1MHz
Transistor Configuration
Single
Dimensiones del Cuerpo
6.73 x 6.22 x 2.39mm
Máxima Temperatura de Funcionamiento
+175 °C
Temperatura Mínima de Funcionamiento
-40 ºC
Datos del producto
IGBT discretos, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Información de stock no disponible temporalmente.
Vuelva a verificar más tarde.
$ 2,153
Each (In a Pack of 5) (Sin IVA)
5
$ 2,153
Each (In a Pack of 5) (Sin IVA)
5
Comprar en grandes cantidades
| Cantidad | Precio Unitario sin IVA | Per Pack |
|---|---|---|
| 5 - 5 | $ 2,153 | $ 10,76 |
| 10 - 95 | $ 1,815 | $ 9,08 |
| 100 - 245 | $ 1,369 | $ 6,85 |
| 250 - 495 | $ 1,329 | $ 6,65 |
| 500+ | $ 1,162 | $ 5,81 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
onsemiCorriente Máxima Continua del Colector
21 A
Tensión Máxima Colector-Emisor
300 V
Tensión Máxima Puerta-Emisor
±10V
Disipación de Potencia Máxima
150000 mW
Tipo de Encapsulado
DPAK (TO-252)
Tipo de montaje
Surface Mount
Tipo de Canal
N
Conteo de Pines
3
Velocidad de Conmutación
1MHz
Transistor Configuration
Single
Dimensiones del Cuerpo
6.73 x 6.22 x 2.39mm
Máxima Temperatura de Funcionamiento
+175 °C
Temperatura Mínima de Funcionamiento
-40 ºC
Datos del producto
IGBT discretos, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products