IGBT, FGA60N65SMD, N-Canal, 120 A, 650 V, TO-3PN, 3-Pines Simple

Código de producto RS: 166-2181Marca: onsemiNúmero de parte de fabricante: FGA60N65SMD
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Ver todo en IGBTs

Documentos Técnicos

Especificaciones

Brand

onsemi

Corriente Máxima Continua del Colector

120 A

Tensión Máxima Colector-Emisor

650 V

Tensión Máxima Puerta-Emisor

±20V

Disipación de Potencia Máxima

600000 mW

Tipo de Encapsulado

TO-3PN

Tipo de montaje

Through Hole

Tipo de Canal

N

Conteo de Pines

3

Configuración de transistor

Single

Dimensiones

15.8 x 5 x 20.1mm

Máxima Temperatura de Funcionamiento

+175 °C

Temperatura Mínima de Operación

-55 °C

Datos del producto

IGBT discretos, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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Información de stock no disponible temporalmente.

$ 147,88

$ 4,929 Each (In a Tube of 30) (Sin IVA)

IGBT, FGA60N65SMD, N-Canal, 120 A, 650 V, TO-3PN, 3-Pines Simple

$ 147,88

$ 4,929 Each (In a Tube of 30) (Sin IVA)

IGBT, FGA60N65SMD, N-Canal, 120 A, 650 V, TO-3PN, 3-Pines Simple
Información de stock no disponible temporalmente.

Información de stock no disponible temporalmente.

Vuelva a verificar más tarde.

CantidadPrecio Unitario sin IVAPer Tubo
30 - 90$ 4,929$ 147,88
120 - 240$ 4,332$ 129,97
270 - 480$ 4,23$ 126,89
510+$ 3,756$ 112,68

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificaciones

Brand

onsemi

Corriente Máxima Continua del Colector

120 A

Tensión Máxima Colector-Emisor

650 V

Tensión Máxima Puerta-Emisor

±20V

Disipación de Potencia Máxima

600000 mW

Tipo de Encapsulado

TO-3PN

Tipo de montaje

Through Hole

Tipo de Canal

N

Conteo de Pines

3

Configuración de transistor

Single

Dimensiones

15.8 x 5 x 20.1mm

Máxima Temperatura de Funcionamiento

+175 °C

Temperatura Mínima de Operación

-55 °C

Datos del producto

IGBT discretos, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more