MOSFET onsemi FDS8884, VDSS 30 V, ID 8.5 A, SOIC de 8 pines, , config. Simple
Documentos Técnicos
Especificaciones
Brand
onsemiTipo de Canal
N
Corriente Máxima Continua de Drenaje
8.5 A
Tensión Máxima Drenador-Fuente
30 (canal N) V, -30 (canal P) V
Tipo de Encapsulado
SOIC
Series
PowerTrench
Tipo de montaje
Montaje superficial
Conteo de Pines
8
Resistencia Máxima Drenador-Fuente
23 mΩ
Modo de Canal
Mejora
Tensión de umbral de puerta mínima
1.2V
Disipación de Potencia Máxima
2.5 W
Configuración de transistor
Single
Tensión Máxima Puerta-Fuente
-20 V, +20 V
Profundidad
4mm
Material del transistor
Si
Número de Elementos por Chip
1
Longitud
5mm
Temperatura Máxima de Operación
+150 ºC
Carga Típica de Puerta @ Vgs
9,2 nC a 10 V
Altura
1.5mm
Mínima Temperatura de Funcionamiento
-55 °C
Datos del producto
MOSFET de canal N PowerTrench®, hasta 9,9 A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 4,97
€ 0,497 Each (In a Pack of 10) (Sin IVA)
Estándar
10
€ 4,97
€ 0,497 Each (In a Pack of 10) (Sin IVA)
Estándar
10
Información de stock no disponible temporalmente.
Vuelva a verificar más tarde.
| Cantidad | Precio Unitario sin IVA | Per Pack |
|---|---|---|
| 10 - 90 | € 0,497 | € 4,98 |
| 100 - 240 | € 0,428 | € 4,28 |
| 250 - 490 | € 0,372 | € 3,72 |
| 500 - 990 | € 0,327 | € 3,27 |
| 1000+ | € 0,297 | € 2,97 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
onsemiTipo de Canal
N
Corriente Máxima Continua de Drenaje
8.5 A
Tensión Máxima Drenador-Fuente
30 (canal N) V, -30 (canal P) V
Tipo de Encapsulado
SOIC
Series
PowerTrench
Tipo de montaje
Montaje superficial
Conteo de Pines
8
Resistencia Máxima Drenador-Fuente
23 mΩ
Modo de Canal
Mejora
Tensión de umbral de puerta mínima
1.2V
Disipación de Potencia Máxima
2.5 W
Configuración de transistor
Single
Tensión Máxima Puerta-Fuente
-20 V, +20 V
Profundidad
4mm
Material del transistor
Si
Número de Elementos por Chip
1
Longitud
5mm
Temperatura Máxima de Operación
+150 ºC
Carga Típica de Puerta @ Vgs
9,2 nC a 10 V
Altura
1.5mm
Mínima Temperatura de Funcionamiento
-55 °C
Datos del producto
MOSFET de canal N PowerTrench®, hasta 9,9 A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products