N-Channel MOSFET, 76 A, 100 V, 3-Pin TO-220 onsemi FDP8D5N10C
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
76 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
8.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
4.67mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.36mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Height
15.21mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Country of Origin
China
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€ 2.047
Each (In a Pack of 2) (Exc. Vat)
2
€ 2.047
Each (In a Pack of 2) (Exc. Vat)
2
Buy in bulk
| Quantity | Unit price | Per Pack |
|---|---|---|
| 2 - 8 | € 2.047 | € 4.09 |
| 10 - 98 | € 1.737 | € 3.47 |
| 100 - 248 | € 1.392 | € 2.78 |
| 250 - 498 | € 1.316 | € 2.63 |
| 500+ | € 1.246 | € 2.49 |
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Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
76 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
8.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
4.67mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.36mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Height
15.21mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Country of Origin
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products