onsemi PowerTrench N-Channel MOSFET, 214 A, 100 V, 3-Pin TO-220AB FDP036N10A

RS Stock No.: 739-4866Brand: onsemiManufacturers Part No.: FDP036N10A
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

214 A

Maximum Drain Source Voltage

100 V

Series

PowerTrench

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3.6 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

333 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

89 nC @ 10 V

Width

4.83mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.67mm

Maximum Operating Temperature

+175 °C

Height

9.4mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

PowerTrench® N-Channel MOSFET, over 60A, Fairchild Semiconductor

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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€ 1.86

€ 1.86 Each (Exc. VAT)

onsemi PowerTrench N-Channel MOSFET, 214 A, 100 V, 3-Pin TO-220AB FDP036N10A
Select packaging type

€ 1.86

€ 1.86 Each (Exc. VAT)

onsemi PowerTrench N-Channel MOSFET, 214 A, 100 V, 3-Pin TO-220AB FDP036N10A

Stock information temporarily unavailable.

Select packaging type

Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

214 A

Maximum Drain Source Voltage

100 V

Series

PowerTrench

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3.6 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

333 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

89 nC @ 10 V

Width

4.83mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.67mm

Maximum Operating Temperature

+175 °C

Height

9.4mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

PowerTrench® N-Channel MOSFET, over 60A, Fairchild Semiconductor

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more