MOSFET onsemi FDMC8010, VDSS 30 V, ID 30 A, Power 33 de 8 pines, , config. Simple
Documentos Técnicos
Especificaciones
Brand
onsemiTipo de Canal
N
Corriente Máxima Continua de Drenaje
30 A
Tensión Máxima Drenador-Fuente
30 (canal N) V, -30 (canal P) V
Series
PowerTrench
Tipo de Encapsulado
Power 33
Tipo de montaje
Surface Mount
Conteo de Pines
8
Resistencia Máxima Drenador-Fuente
2 mΩ
Modo de Canal
Mejora
Tensión de umbral de puerta mínima
1.2V
Disipación de Potencia Máxima
54 W
Configuración de transistor
Single
Tensión Máxima Puerta-Fuente
-20 V, +20 V
Profundidad
3.3mm
Material del transistor
Si
Número de Elementos por Chip
1
Longitud:
3.3mm
Carga Típica de Puerta @ Vgs
67 nC a 10 V
Máxima Temperatura de Funcionamiento
+150 ºC
Altura
0.75mm
Mínima Temperatura de Funcionamiento
-55 °C
Datos del producto
MOSFET de canal N PowerTrench®, de 20 A a 59,9 A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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€ 7,86
€ 1,572 Each (Supplied on a Reel) (Sin IVA)
Empaque de Producción (Rollo)
5
€ 7,86
€ 1,572 Each (Supplied on a Reel) (Sin IVA)
Empaque de Producción (Rollo)
5
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Vuelva a verificar más tarde.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
onsemiTipo de Canal
N
Corriente Máxima Continua de Drenaje
30 A
Tensión Máxima Drenador-Fuente
30 (canal N) V, -30 (canal P) V
Series
PowerTrench
Tipo de Encapsulado
Power 33
Tipo de montaje
Surface Mount
Conteo de Pines
8
Resistencia Máxima Drenador-Fuente
2 mΩ
Modo de Canal
Mejora
Tensión de umbral de puerta mínima
1.2V
Disipación de Potencia Máxima
54 W
Configuración de transistor
Single
Tensión Máxima Puerta-Fuente
-20 V, +20 V
Profundidad
3.3mm
Material del transistor
Si
Número de Elementos por Chip
1
Longitud:
3.3mm
Carga Típica de Puerta @ Vgs
67 nC a 10 V
Máxima Temperatura de Funcionamiento
+150 ºC
Altura
0.75mm
Mínima Temperatura de Funcionamiento
-55 °C
Datos del producto
MOSFET de canal N PowerTrench®, de 20 A a 59,9 A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products