MOSFET onsemi FDD86102LZ, VDSS 100 V, ID 8 A, DPAK (TO-252) de 3 pines, , config. Simple
Documentos Técnicos
Especificaciones
Brand
onsemiTipo de Canal
N
Corriente Máxima Continua de Drenaje
8 A
Tensión Máxima Drenador-Fuente
100 V
Series
PowerTrench
Tipo de Encapsulado
DPAK (TO-252)
Tipo de montaje
Surface Mount
Conteo de Pines
3
Resistencia Máxima Drenador-Fuente
40 mΩ
Modo de Canal
Mejora
Tensión de umbral de puerta mínima
1V
Disipación de Potencia Máxima
54 W
Configuración de transistor
Single
Tensión Máxima Puerta-Fuente
-20 V, +20 V
Profundidad
6.22mm
Longitud:
6.73mm
Carga Típica de Puerta @ Vgs
18 nC a 10 V
Material del transistor
Si
Máxima Temperatura de Funcionamiento
+150 ºC
Número de Elementos por Chip
1
Altura
2.39mm
Mínima Temperatura de Funcionamiento
-55 °C
Datos del producto
MOSFET de canal N PowerTrench®, hasta 9,9 A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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€ 1.732,75
€ 0,693 Each (On a Reel of 2500) (Sin IVA)
2500
€ 1.732,75
€ 0,693 Each (On a Reel of 2500) (Sin IVA)
2500
Información de stock no disponible temporalmente.
Vuelva a verificar más tarde.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
onsemiTipo de Canal
N
Corriente Máxima Continua de Drenaje
8 A
Tensión Máxima Drenador-Fuente
100 V
Series
PowerTrench
Tipo de Encapsulado
DPAK (TO-252)
Tipo de montaje
Surface Mount
Conteo de Pines
3
Resistencia Máxima Drenador-Fuente
40 mΩ
Modo de Canal
Mejora
Tensión de umbral de puerta mínima
1V
Disipación de Potencia Máxima
54 W
Configuración de transistor
Single
Tensión Máxima Puerta-Fuente
-20 V, +20 V
Profundidad
6.22mm
Longitud:
6.73mm
Carga Típica de Puerta @ Vgs
18 nC a 10 V
Material del transistor
Si
Máxima Temperatura de Funcionamiento
+150 ºC
Número de Elementos por Chip
1
Altura
2.39mm
Mínima Temperatura de Funcionamiento
-55 °C
Datos del producto
MOSFET de canal N PowerTrench®, hasta 9,9 A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products