onsemi N-Channel MOSFET, 10 A, 650 V, 4-Pin PQFN4 FCMT360N65S3
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
650 V
Package Type
PQFN4
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
360 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
83 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Number of Elements per Chip
1
Width
8mm
Length
8mm
Typical Gate Charge @ Vgs
18 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.05mm
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€ 5,108.36
€ 1.703 Each (On a Reel of 3000) (Exc. VAT)
3000
€ 5,108.36
€ 1.703 Each (On a Reel of 3000) (Exc. VAT)
Stock information temporarily unavailable.
3000
Stock information temporarily unavailable.
Ideate. Create. Collaborate
JOIN FOR FREE
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Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
650 V
Package Type
PQFN4
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
360 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
83 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Number of Elements per Chip
1
Width
8mm
Length
8mm
Typical Gate Charge @ Vgs
18 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.05mm
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products