onsemi 2N7002 Type N-Channel MOSFET, 115 mA, 60 V Enhancement, 3-Pin SOT-23
Technical Document
Specifications
Brand
onsemiProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
115mA
Maximum Drain Source Voltage Vds
60V
Package Type
SOT-23
Series
2N7002
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
7.5Ω
Channel Mode
Enhancement
Maximum Power Dissipation Pd
200mW
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
223nC
Forward Voltage Vf
1.2V
Maximum Operating Temperature
150°C
Width
1.3 mm
Height
0.93mm
Length
2.92mm
Standards/Approvals
No
Automotive Standard
AEC-Q100, AEC-Q200, AEC-Q101
Product details
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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Stock information temporarily unavailable.
€ 36.95
€ 0.185 Each (Supplied on a Reel) (Exc. VAT)
Production pack (Reel)
200
€ 36.95
€ 0.185 Each (Supplied on a Reel) (Exc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
200
| Quantity | Unit price | Per Reel |
|---|---|---|
| 200 - 480 | € 0.185 | € 3.70 |
| 500 - 980 | € 0.16 | € 3.19 |
| 1000 - 1980 | € 0.14 | € 2.80 |
| 2000+ | € 0.128 | € 2.55 |
Ideate. Create. Collaborate
JOIN FOR FREE
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Technical Document
Specifications
Brand
onsemiProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
115mA
Maximum Drain Source Voltage Vds
60V
Package Type
SOT-23
Series
2N7002
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
7.5Ω
Channel Mode
Enhancement
Maximum Power Dissipation Pd
200mW
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
223nC
Forward Voltage Vf
1.2V
Maximum Operating Temperature
150°C
Width
1.3 mm
Height
0.93mm
Length
2.92mm
Standards/Approvals
No
Automotive Standard
AEC-Q100, AEC-Q200, AEC-Q101
Product details
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products