Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
5 A dc
Maximum Collector Emitter Voltage
60 V dc
Maximum Emitter Base Voltage
5 V dc
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Configuration
Single
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
200
Maximum Collector Base Voltage
60 V dc
Maximum Collector Emitter Saturation Voltage
2.5 V dc
Height
15.75mm
Width
4.83mm
Maximum Operating Temperature
+150 °C
Length
10.53mm
Maximum Power Dissipation
80 W
Minimum Operating Temperature
-65 °C
Dimensions
10.53 x 4.83 x 15.75mm
Country of Origin
China
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P.O.A.
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P.O.A.
10
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Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
5 A dc
Maximum Collector Emitter Voltage
60 V dc
Maximum Emitter Base Voltage
5 V dc
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Configuration
Single
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
200
Maximum Collector Base Voltage
60 V dc
Maximum Collector Emitter Saturation Voltage
2.5 V dc
Height
15.75mm
Width
4.83mm
Maximum Operating Temperature
+150 °C
Length
10.53mm
Maximum Power Dissipation
80 W
Minimum Operating Temperature
-65 °C
Dimensions
10.53 x 4.83 x 15.75mm
Country of Origin
China