Dual N-Channel MOSFET, 540 mA, 20 V, 6-Pin SOT-563 onsemi NTZD3154NT1G

RS Stock No.: 184-1071Brand: onsemiManufacturers Part No.: NTZD3154NT1G
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

540 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-563

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

900 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.45V

Maximum Power Dissipation

250 mW

Maximum Gate Source Voltage

±7 V

Width

1.3mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

1.7mm

Typical Gate Charge @ Vgs

1.5 nC @ 4.5 V

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

0.6mm

Country of Origin

China

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€ 0.082

Each (On a Reel of 4000) (Exc. Vat)

Dual N-Channel MOSFET, 540 mA, 20 V, 6-Pin SOT-563 onsemi NTZD3154NT1G

€ 0.082

Each (On a Reel of 4000) (Exc. Vat)

Dual N-Channel MOSFET, 540 mA, 20 V, 6-Pin SOT-563 onsemi NTZD3154NT1G
Stock information temporarily unavailable.

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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

540 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-563

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

900 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.45V

Maximum Power Dissipation

250 mW

Maximum Gate Source Voltage

±7 V

Width

1.3mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

1.7mm

Typical Gate Charge @ Vgs

1.5 nC @ 4.5 V

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

0.6mm

Country of Origin

China