onsemi P-Channel MOSFET, 1.5 A, 8 V, 3-Pin SOT-323 NTS2101PT1G
Technical Document
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
1.5 A
Maximum Drain Source Voltage
8 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
210 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.45V
Maximum Power Dissipation
330 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Maximum Operating Temperature
+150 °C
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.2mm
Typical Gate Charge @ Vgs
6.4 nC @ 5 V
Height
0.9mm
Minimum Operating Temperature
-55 °C
Product details
P-Channel Power MOSFET, 8V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 2.81
€ 0.113 Each (In a Pack of 25) (Exc. VAT)
Standard
25
€ 2.81
€ 0.113 Each (In a Pack of 25) (Exc. VAT)
Stock information temporarily unavailable.
Standard
25
Stock information temporarily unavailable.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 25 - 75 | € 0.113 | € 2.81 |
| 100 - 225 | € 0.097 | € 2.42 |
| 250 - 475 | € 0.084 | € 2.10 |
| 500 - 975 | € 0.074 | € 1.85 |
| 1000+ | € 0.067 | € 1.68 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
1.5 A
Maximum Drain Source Voltage
8 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
210 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.45V
Maximum Power Dissipation
330 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Maximum Operating Temperature
+150 °C
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.2mm
Typical Gate Charge @ Vgs
6.4 nC @ 5 V
Height
0.9mm
Minimum Operating Temperature
-55 °C
Product details
P-Channel Power MOSFET, 8V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products