N-Channel MOSFET, 2.4 A, 30 V, 3-Pin SOT-23 onsemi NTR4170NT1G

RS Stock No.: 184-1067Brand: onsemiManufacturers Part No.: NTR4170NT1G
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

2.4 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

110 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.4V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

480 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±12 V

Maximum Operating Temperature

+150 °C

Length

3.04mm

Typical Gate Charge @ Vgs

4.76 nC @ 4.5 V

Width

1.4mm

Number of Elements per Chip

1

Forward Diode Voltage

1V

Height

1.01mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

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€ 0.109

Each (On a Reel of 3000) (Exc. Vat)

N-Channel MOSFET, 2.4 A, 30 V, 3-Pin SOT-23 onsemi NTR4170NT1G

€ 0.109

Each (On a Reel of 3000) (Exc. Vat)

N-Channel MOSFET, 2.4 A, 30 V, 3-Pin SOT-23 onsemi NTR4170NT1G
Stock information temporarily unavailable.

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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

2.4 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

110 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.4V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

480 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±12 V

Maximum Operating Temperature

+150 °C

Length

3.04mm

Typical Gate Charge @ Vgs

4.76 nC @ 4.5 V

Width

1.4mm

Number of Elements per Chip

1

Forward Diode Voltage

1V

Height

1.01mm

Minimum Operating Temperature

-55 °C

Country of Origin

China