onsemi SUPERFET III N-Channel MOSFET Transistor & Diode, 13 A, 800 V, 3-Pin TO-220 NTP360N80S3Z

RS Stock No.: 205-2503Brand: onsemiManufacturers Part No.: NTP360N80S3Z
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

13 A

Maximum Drain Source Voltage

800 V

Series

SuperFET III

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

360 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Number of Elements per Chip

1

Transistor Material

Si

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€ 1,448.72

€ 1.811 Each (In a Tube of 800) (Exc. VAT)

onsemi SUPERFET III N-Channel MOSFET Transistor & Diode, 13 A, 800 V, 3-Pin TO-220 NTP360N80S3Z

800

Available in multiples of 800
800€ 1,448.72
1600€ 2,897.43
2400€ 4,346.15
3200€ 5,794.86
4000€ 7,243.58
4800€ 8,692.30
5600€ 10,141.01
6400€ 11,589.73
7200€ 13,038.44
8000€ 14,487.16
8800€ 15,935.87
9600€ 17,384.59
10400€ 18,833.31
11200€ 20,282.02
12000€ 21,730.74

€ 1,448.72

€ 1.811 Each (In a Tube of 800) (Exc. VAT)

onsemi SUPERFET III N-Channel MOSFET Transistor & Diode, 13 A, 800 V, 3-Pin TO-220 NTP360N80S3Z

Stock information temporarily unavailable.

800

Available in multiples of 800
800€ 1,448.72
1600€ 2,897.43
2400€ 4,346.15
3200€ 5,794.86
4000€ 7,243.58
4800€ 8,692.30
5600€ 10,141.01
6400€ 11,589.73
7200€ 13,038.44
8000€ 14,487.16
8800€ 15,935.87
9600€ 17,384.59
10400€ 18,833.31
11200€ 20,282.02
12000€ 21,730.74

Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

13 A

Maximum Drain Source Voltage

800 V

Series

SuperFET III

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

360 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Number of Elements per Chip

1

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more