onsemi N-Channel MOSFET, 191 A, 30 V, 8-Pin SO-8FL NTMFS4833NT1G

RS Stock No.: 184-1065Brand: onsemiManufacturers Part No.: NTMFS4833NT1G
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

191 A

Maximum Drain Source Voltage

30 V

Package Type

SO-8FL

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

113.6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

4.9mm

Length

5.8mm

Typical Gate Charge @ Vgs

88 nC @ 11.5 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Height

1.05mm

Country of Origin

Malaysia

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Each (On a Reel of 1500) (Exc. VAT)

onsemi N-Channel MOSFET, 191 A, 30 V, 8-Pin SO-8FL NTMFS4833NT1G

1500

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Price on asking

Each (On a Reel of 1500) (Exc. VAT)

onsemi N-Channel MOSFET, 191 A, 30 V, 8-Pin SO-8FL NTMFS4833NT1G

Stock information temporarily unavailable.

1500

Available in multiples of 1500
1500Price on asking
3000Price on asking
4500Price on asking
6000Price on asking
7500Price on asking
9000Price on asking
10500Price on asking
12000Price on asking
13500Price on asking
15000Price on asking
16500Price on asking
18000Price on asking
19500Price on asking
21000Price on asking
22500Price on asking

Stock information temporarily unavailable.

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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

191 A

Maximum Drain Source Voltage

30 V

Package Type

SO-8FL

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

113.6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

4.9mm

Length

5.8mm

Typical Gate Charge @ Vgs

88 nC @ 11.5 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Height

1.05mm

Country of Origin

Malaysia

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more