Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
46 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
337 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
4.82mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
15.87mm
Typical Gate Charge @ Vgs
98 nC @ 10 V
Height
20.82mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Country of Origin
China
Stock information temporarily unavailable.
Please check again later.
€ 8.651
Each (In a Tube of 30) (Exc. Vat)
30
€ 8.651
Each (In a Tube of 30) (Exc. Vat)
30
Buy in bulk
Quantity | Unit price | Per Tube |
---|---|---|
30 - 90 | € 8.651 | € 259.54 |
120 - 240 | € 8.424 | € 252.70 |
270 - 480 | € 8.208 | € 246.23 |
510+ | € 8.002 | € 240.06 |
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
46 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
337 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
4.82mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
15.87mm
Typical Gate Charge @ Vgs
98 nC @ 10 V
Height
20.82mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Country of Origin
China