N-Channel MOSFET, 915 mA, 20 V, 3-Pin SOT-523 onsemi NTE4153NT1G

RS Stock No.: 184-1063Brand: onsemiManufacturers Part No.: NTE4153NT1G
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

915 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-523 (SC-89)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

950 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

0.45V

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±6 V

Length

1.7mm

Typical Gate Charge @ Vgs

1.82 nC @ 4.5 V

Width

0.95mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Automotive Standard

AEC-Q101

Height

0.8mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

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€ 0.053

Each (On a Reel of 3000) (Exc. Vat)

N-Channel MOSFET, 915 mA, 20 V, 3-Pin SOT-523 onsemi NTE4153NT1G

€ 0.053

Each (On a Reel of 3000) (Exc. Vat)

N-Channel MOSFET, 915 mA, 20 V, 3-Pin SOT-523 onsemi NTE4153NT1G
Stock information temporarily unavailable.

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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

915 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-523 (SC-89)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

950 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

0.45V

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±6 V

Length

1.7mm

Typical Gate Charge @ Vgs

1.82 nC @ 4.5 V

Width

0.95mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Automotive Standard

AEC-Q101

Height

0.8mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V