Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
12 V
Package Type
SC-82FL
Mounting Type
Surface Mount
Maximum Power Dissipation
450 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
2 V
Maximum Operating Frequency
1 GHz
Pin Count
4
Number of Elements per Chip
1
Dimensions
2 x 1.6 x 0.85mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
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P.O.A.
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Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
12 V
Package Type
SC-82FL
Mounting Type
Surface Mount
Maximum Power Dissipation
450 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
2 V
Maximum Operating Frequency
1 GHz
Pin Count
4
Number of Elements per Chip
1
Dimensions
2 x 1.6 x 0.85mm
Maximum Operating Temperature
+150 °C
Country of Origin
China